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| GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation, TS 56 C2) Channel temperature Storage temperature range Thermal Resistance Channel - soldering point2) Rth chS 375 K/W Symbol VDS VDG VGS ID Ptot Tch Tstg Values 5 7 -5...+0 80 250 150 - 65 ... + 150 mA mW C Unit V 1) 2) For detailed information see chapter Package Outlines. TS is measured on the source lead at the soldering point to the pcb. Semiconductor Group 1 07.94 CFY 25 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Drain-source saturation current VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Symbol min. IDSS Vp IG gm F - - - Ga 9 8.5 8.5 9.5 9 9 - - - 1.6 1.9 2.2 1.7 2.0 2.3 15 - 0.3 - 30 Values typ. 30 - 1.0 0.1 40 max. 60 - 3.0 2 - mA V A Unit mS dB Semiconductor Group 2 CFY 25 Total power dissipation Ptot = f (TS; TA*) * Package mounted on alumina Output characteristics ID = f (VDS) Transfer characteristics ID = f (VG) VDS = 3 V Semiconductor Group 3 CFY 25 Common Source Noise Parameters f GHz Fmin dB Ga dB opt MAG ANG RN rN - N - F50 dB G(F50 ) dB ID = 15 mA, VDS = 3.0 V, Z0 = 50 2 4 6 8 10 12 14 0.60 0.77 1.00 1.25 1.55 1.77 2.15 18.5 14.6 12.4 11.0 9.8 9.0 8.1 0.70 0.59 0.50 0.47 0.45 0.43 0.41 31 63 103 140 174 - 156 - 130 29 21 13 7.3 5.6 7.1 18 0.580 0.420 0.260 0.146 0.112 0.142 0.360 0.10 0.14 0.19 0.23 0.28 0.29 0.46 2.0 1.8 1.8 2.0 2.4 2.5 3.0 11.4 10.5 9.3 8.2 7.3 6.4 5.8 Source impedance for min. noise figure ID = 15 mA, VDS = 3 V Circles of constant noise figure ID = 15 mA, VDS = 3 V, f = 12 GHz Semiconductor Group 4 CFY 25 Minimum noise figure Fmin = f (f) Associated gain Ga = f (f) ID = 15 mA, VDS = 3 V, ZSopt Minimum noise figure Fmin = f (ID) Associated gain Ga = f (ID) VDS = 3 V, f = 12 GHz, ZSopt Semiconductor Group 5 CFY 25 Common Source S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG ID = 15 mA, VDS = 3 V, Z0 = 50 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.99 0.96 0.91 0.86 0.81 0.77 0.74 0.70 0.68 0.67 0.67 0.66 0.66 0.66 0.66 0.66 0.66 0.66 - 21 - 42 - 67 - 87 - 107 - 125 - 145 - 165 178 161 146 132 117 103 90 77 63 47 3.83 3.73 3.55 3.34 3.10 2.92 2.74 2.57 2.42 2.31 2.20 2.10 2.02 1.94 1.90 1.84 1.80 1.78 161 141 121 103 86 70 54 37 23 9 -4 - 17 - 31 - 44 - 57 - 70 - 84 - 99 0.026 0.049 0.069 0.083 0.093 0.100 0.105 0.107 0.108 0.109 0.110 0.110 0.110 0.112 0.115 0.119 0.125 0.132 75 61 45 33 21 11 1 -9 - 17 - 24 - 30 - 36 - 42 - 49 - 55 - 63 - 72 - 83 0.68 0.66 0.63 0.59 0.56 0.52 0.48 0.45 0.42 0.41 0.39 0.37 0.36 0.35 0.34 0.33 0.32 0.31 - 13 - 27 - 41 - 55 - 66 - 77 - 89 - 102 - 112 - 124 - 134 - 145 - 158 - 169 180 165 151 136 S11, S22 ID = 15 mA, VDS = 3 V, Z0 = 50 S12, S21 ID = 15 mA, VDS = 3 V, Z0 = 50 Semiconductor Group 6 |
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